Researchers develop new integration technique for efficient coupling of III-V and silicon
Researchers develop new integration technique for efficient coupling of III-V and silicon- Researchers at the Hong Kong University of Science and Technology (HKUST) have developed a new integration technique for efficient integration of III-V compound semiconductor devices and silicon, paving the way for photonic integration at low cost, large volume, and high speed and throughput that could revolutionize data communications.
Source: phys.org
