Advances in semiconductor patterning New block copolymer achieves 76 nm line width

Advances in semiconductor patterning New block copolymer achieves 76 nm line width- A recently developed block copolymer could help push the limits of integration and miniaturization in semiconductor manufacturing, report scientists at Tokyo Institute of Technology (Tokyo Tech) and Tokyo Ohka Kogyo (TOK). Chemically tailored for reliable directed self-assembly, the proposed compound can arrange itself into perpendicular lamellar structures whose half-pitch width is less than 10 nanometers, outperforming conventional and widely used block copolymers.

Source: phys.org